The Impact of Extreme Ultraviolet Lithography (EUVL) on Semiconductor Scaling

Abstract

Extreme Ultraviolet Lithography (EUVL) represents a significant advancement in semiconductor manufacturing, enabling further scaling down of device features beyond the limits of traditional photolithography. This paper explores the impact of EUVL on semiconductor scaling, detailing its technical principles, advantages, and challenges. EUVL facilitates the production of smaller, more efficient, and powerful semiconductor devices by using a shorter wavelength of light (13.5 nm) compared to deep ultraviolet lithography. This technology allows for finer patterning, reducing feature sizes to below 7 nm, thus supporting the continuation of Moore's Law. However, the implementation of EUVL comes with its own set of challenges, including high equipment costs, complex process integration, and the need for specialized materials and masks. The paper discusses the current state of EUVL technology, its integration into semiconductor manufacturing, and future prospects in the context of ongoing advancements in semiconductor scaling.